The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Jul. 26, 2010
Applicants:

Thierry Oggier, Zurich, CH;

Michael Lehmann, Winterthur, CH;

Inventors:

Thierry Oggier, Zurich, CH;

Michael Lehmann, Winterthur, CH;

Assignee:

MESA Imaging AG, Zurich, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 31/00 (2006.01); H01J 40/14 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14609 (2013.01); H01L 27/1463 (2013.01);
Abstract

A high-speed, high-sensitivity demodulation sensor usable for e.g. time-of-flight application uses a back side illuminated (BSI) image sensor chip, in which the photo-generated charges are first transferred to a demodulation area, from which the charges are then sampled and stored on at least one specific storage node. The storage node is electrically isolated from the sensitive area. Such a pixel might find its use specifically in 3D time-of-flight imaging given its improvements in sensitivity because the presented invention allows to design pixel with up to 100% fill factor and enables charge detection even if the charge generation by the photon occurs deep in the silicon substrate.


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