The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jul. 03, 2014
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Christelle Charpin-Nicolle, Fontanil-Cornillon, FR;
Abstract
A method of manufacturing a double-gate electronic memory cell is presented. The cell includes a substrate; a first gate structure, with the first gate structure having a lateral flank; a stack including several layers and of which a layer is able to store electrical charges, the stack covering the lateral flank of the first gate structure and a portion of the substrate; and a second gate structure. The second gate structure includes a first portion formed from a first gate material; a second portion formed from a second gate material, with the first gate material able to be etched selectively in relation to the second gate material and with the second gate material able to be etched selectively in relation to the first gate material; a first zone of silicidation extending over the first portion of the second gate structure; and a second zone of silicidation extending over the second portion of the second gate structure.