The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Apr. 30, 2012
Applicants:

Hiroyuki Tomatsu, Kanagawa, JP;

Hidetomo Kobayashi, Kanagawa, JP;

Yutaka Shionoiri, Kanagawa, JP;

Inventors:

Hiroyuki Tomatsu, Kanagawa, JP;

Hidetomo Kobayashi, Kanagawa, JP;

Yutaka Shionoiri, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 7/00 (2006.01); H01L 27/115 (2006.01); G11C 7/02 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1156 (2013.01); G11C 7/02 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01);
Abstract

Noise generated on a word line is reduced without increasing a load on the word line. A semiconductor device is provided in which a plurality of storage elements each including at least one switching element are provided in matrix; each of the plurality of storage elements is electrically connected to a word line and a bit line; the word line is connected to a gate (or a source and a drain) of a transistor in which minority carriers do not exist substantially; and capacitance of the transistor in which minority carriers do not exist substantially can be controlled by controlling a potential of a source and a drain (or a gate) the transistor in which minority carriers do not exist substantially. The transistor in which minority carriers do not exist substantially may include a wide band gap semiconductor.


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