The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

May. 01, 2013
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Franz Hirler, Isen, DE;

Hans Weber, Bayerisch Gmain, DE;

Stefan Gamerith, Villach, AT;

Armin Willmeroth, Augsburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/105 (2013.01); H01L 29/063 (2013.01); H01L 29/7802 (2013.01);
Abstract

A super junction semiconductor device includes strip structures between mesa regions that protrude from a base section in a cell area. Each strip structure includes a compensation structure with a first and a second section inversely provided on opposing sides of a fill structure. Each section includes a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type. The strip structures extend into an edge area surrounding the cell area. In the edge area the strip structures include end sections. The end sections may be modified to enhance break down voltage characteristics, avalanche ruggedness and commutation behavior.


Find Patent Forward Citations

Loading…