The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Jul. 17, 2014
Applicant:

Soitec, Crolles Cedex, FR;

Inventor:

Gweltaz Gaudin, Grenoble, FR;

Assignee:

SOITEC, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 29/06 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); B81C 3/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); B81C 3/001 (2013.01); H01L 21/2007 (2013.01); H01L 21/76251 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); B81C 2203/036 (2013.01); H01L 24/94 (2013.01); H01L 2224/279 (2013.01); H01L 2224/2781 (2013.01); H01L 2224/27452 (2013.01); H01L 2224/27616 (2013.01); H01L 2224/27848 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/832 (2013.01); H01L 2224/83014 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83896 (2013.01); H01L 2224/94 (2013.01); H01L 2924/1461 (2013.01);
Abstract

The invention relates to a process for assembling a first element that includes at least one first wafer, substrate or at least one chip, and a second element of at least one second wafer or substrate, involving the formation of a surface layer, known as a bonding layer, on each substrate, at least one of the bonding layers being formed at a temperature less than or equal to 300° C.; conducting a first annealing, known as degassing annealing, of the bonding layers, before assembly, at least partly at a temperature at least equal to the subsequent bonding interface strengthening temperature but below 450° C.; forming an assembling of the substrates by bringing into contact the exposed surfaces of the bonding layers, and conducting an annealing of the assembled structure at a bonding interface strengthening temperature below 450° C.


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