logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9117674 B1

PDFFull Text
Date of Patent:
Aug. 25, 2015

Filed:

Apr. 03, 2012

Method of selective growth without catalyst on a semiconducting structure

Applicants:

Joël Eymery, Sassenage, FR;

Damien Salomon, Marseilles, FR;

Xiaojun Chen, Shanghai, CN;

Christophe Durand, Quaix-en-Chartreuse, FR;

Inventors:

Joël Eymery, Sassenage, FR;

Damien Salomon, Marseilles, FR;

Xiaojun Chen, Shanghai, CN;

Christophe Durand, Quaix-en-Chartreuse, FR;

Assignee:

Commissariat a l'energie atomique et aux energies alternatives, Paris, FR;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Caridad Everhart

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/861 (2006.01); H01L 33/18 (2010.01); H01L 33/24 (2010.01); H01L 33/38 (2010.01); B82Y 30/00 (2011.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02636 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02521 (2013.01); H01L 21/02603 (2013.01); H01L 21/02631 (2013.01); H01L 21/02639 (2013.01); H01L 21/02661 (2013.01); H01L 29/068 (2013.01); H01L 29/0676 (2013.01); H01L 29/66469 (2013.01); H01L 29/775 (2013.01); H01L 29/861 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01L 33/38 (2013.01); H01L 29/0665 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto, to selectively in situ grow a dielectric layer on the structure; and then another semi-conducting structure is grown thereon from third gaseous or molecular flows.

Find Patent Forward Citations

Loading…