The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Oct. 24, 2013
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Tobin Kaufman-Osborn, San Diego, CA (US);

Andrew C. Kummel, San Diego, CA (US);

Kiarash Kiantaj, La Jolla, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); H01L 21/0228 (2013.01); H01L 21/02046 (2013.01); H01L 21/02054 (2013.01); H01L 21/02301 (2013.01); H01L 21/02312 (2013.01); H01L 21/28255 (2013.01); H01L 21/302 (2013.01);
Abstract

A method for in-situ dry cleaning of a Ge containing semiconductor surface, other than SiGe. The method is conducted in a vacuum chamber. An oxygen monolayer(s) is formed and promotes removal of essentially all carbon from the surface, and serves to both clean and functionalize the surface. The Ge semiconductor surface is then annealed at a temperature below that which would induce dopant diffusion.


Find Patent Forward Citations

Kaufman-Osborn, Tobin. (2015). Method for in-situ dry cleaning, passivation and functionalization of ge semiconductor surfaces (U.S. Patent No. 9117653). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9117653

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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