The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Jun. 18, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Yann Astier, White Plains, NY (US);

Jingwei Bai, Elmsford, NY (US);

Robert L. Bruce, White Plains, NY (US);

Aaron D. Franklin, Croton on Hudson, NY (US);

Joshua T. Smith, Croton on Hudson, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23F 4/00 (2006.01); H01L 21/02 (2006.01); G01N 27/414 (2006.01); B82Y 40/00 (2011.01); B82B 3/00 (2006.01); B82Y 15/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/02 (2013.01); C23F 4/00 (2013.01); G01N 27/414 (2013.01); B82B 3/008 (2013.01); B82Y 15/00 (2013.01); B82Y 40/00 (2013.01); Y10S 977/762 (2013.01); Y10S 977/888 (2013.01); Y10T 428/12479 (2015.01);
Abstract

A method for forming porous metal structures and the resulting structure may include forming a metal structure above a substrate. A masking layer may be formed above the metal structure, and then etched using a reactive ion etching process with a mask etchant and a metal etchant. Etching the masking layer may result in the formation of a plurality of pores in the metal structure. In some embodiments, the metal structure may include a first end region, a second end region, and an intermediate region. Before etching the masking layer, a protective layer may be formed above the first end region and the second end region, so that the plurality of pores is contained within the intermediate region. In some embodiments, the intermediate metal region may be a nanostructure such as a nanowire.


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