The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jan. 24, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Shengdong Zhang, Shenzhen, CN;
Zhijin Hu, Shenzhen, CN;
Congwei Liao, Shenzhen, CN;
Limei Zeng, Shenzhen, CN;
Changyeh Lee, Shenzhen, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
The present invention provides a gate driver on array (GOA) circuit and a display panel with the GOA circuit. The driver circuit includes multiple stages of gate driver units and multiple stages of supplementary gate driver units connected in cascade, in which the nth stage gate driver unit includes a driving unit () and a pull-down unit () and the mth stage supplementary gate driver unit includes a supplementary driving unit () and a supplementary pull-down unit (). The GOA circuit according to the present invention adopts a dual-pull-down architecture so that thin-film transistors contained in pull-down units and supplementary pull-down units of the circuit can be set in an operation environment featuring dual polarity electrical biasing to effectively suppress threshold voltage drifting of the thin-film transistors of the pull-down units and the supplementary pull-down units and extend the lifespan of circuit thereby making the circuit better meet the needs of large- and medium-sized display panels. Further, the circuit has a simple structure and reduced power consumption and is also fit to low temperature and high temperature operations.