The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Apr. 29, 2010
Applicants:

Gregory A. North, Austin, TX (US);

Thomas A. Fedorko, Buda, TX (US);

Thomas Hegedus, Round Rock, TX (US);

Inventors:

Gregory A. North, Austin, TX (US);

Thomas A. Fedorko, Buda, TX (US);

Thomas Hegedus, Round Rock, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 11/08 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1048 (2013.01); G06F 11/1068 (2013.01); G06F 11/1004 (2013.01); G06F 11/1008 (2013.01);
Abstract

This invention is a method to extend data retention for FLASH based storage in a real time device embodied in generic semiconductor technology. This invention provides a manner to re-energize the Flash memory array to improve the retention characteristics of the memory without altering the clock cycle determinism of the system. Under certain conditions the Flash memory bit cells will lose their charge/non-charge over time. In this particular FLASH technology, an ECC is used to correct single bit errors within a 32 bit word. If there is time before multiple errors occur within a word, the single error cases are identified and 'ReFlashed' to bring the value of the cell back to its 'newly' programmed levels. This dramatically improves the long term retention characteristics of the memory while requiring some control logic and an area of non-volatile scratch/status information.


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