The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Mar. 17, 2014
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Henricus Cornelis Johannes Buthker, Mierlo, NL;
Matthias Rose, Eindhoven, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); G05F 3/24 (2006.01); H03K 17/0812 (2006.01); H03K 17/567 (2006.01); H01L 23/50 (2006.01); H03K 17/30 (2006.01);
U.S. Cl.
CPC ...
G05F 3/247 (2013.01); H01L 23/50 (2013.01); H03K 17/08128 (2013.01); H03K 17/567 (2013.01); H01L 2924/0002 (2013.01); H03K 2017/307 (2013.01); H03K 2017/6875 (2013.01);
Abstract
The invention provides a cascode transistor circuit with a depletion mode transistor and a switching device. A gate bias circuit is connected between the gate of the depletion mode transistor and the low power line. The gate bias circuit is adapted to compensate the forward voltage of a diode function of the switching device. The depletion mode transistor and the gate bias circuit are formed as part of an integrated circuit.