The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Dec. 27, 2012
Applicant:

Picosun Oy, Espoo, FI;

Inventors:

Ivan Kolev, Maastricht, NL;

Paul Peeters, Eindhoven, NL;

Roland Tap, Nürnberg, DE;

Bertram Haag, Uhlfeld, DE;

Yashar Musayev, Nürnberg, DE;

Serge Kursawe, Uttenreuth, DE;

Tim Matthias Hosenfeldt, Nürnberg, DE;

Jürgen Gierl, Erlangen, DE;

Juhana Kostamo, Espoo, FI;

Assignee:

Picosun OY, Espoo, FI;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); F16C 33/02 (2006.01); F16C 33/38 (2006.01); F16C 33/62 (2006.01); F16C 33/46 (2006.01); F16C 33/64 (2006.01); C23C 16/455 (2006.01); F16C 41/00 (2006.01); F16C 33/32 (2006.01); F16C 33/34 (2006.01); F16C 33/04 (2006.01); F16C 33/44 (2006.01); F16C 33/56 (2006.01);
U.S. Cl.
CPC ...
F16C 33/02 (2013.01); C23C 16/45546 (2013.01); C23C 16/45555 (2013.01); C23C 16/50 (2013.01); F16C 33/38 (2013.01); F16C 33/46 (2013.01); F16C 33/62 (2013.01); F16C 33/64 (2013.01); F16C 41/008 (2013.01); F16C 33/043 (2013.01); F16C 33/32 (2013.01); F16C 33/34 (2013.01); F16C 33/445 (2013.01); F16C 33/565 (2013.01); F16C 2202/30 (2013.01); F16C 2206/04 (2013.01); F16C 2206/44 (2013.01); F16C 2223/60 (2013.01); F16C 2240/60 (2013.01); F16C 2240/64 (2013.01); F16C 2380/26 (2013.01);
Abstract

Disclosed is a bearing component having at least one layer having a high hardness and a high current insulation property, the layer comprising a nonconductive oxide layer selected from the group comprising an AlOlayer, a TaO layer, an SiOlayer, a mixed layer comprising two or more of the foregoing oxides, a multilayer structure comprising alternating layers of two or more of the foregoing oxides and a DLC layer such as a ta-C layer, there being at least one ALD layer comprising at least one layer of a material deposited by an ALD (atomic layer deposition) process on the at least one layer having a high hardness and a high current insulation property, the ALD layer itself having a high current insulation property and comprising a material or layer structure selected from the said group of materials.


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