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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9114379 B1

PDFFull Text
Date of Patent:
Aug. 25, 2015

Filed:

Nov. 28, 2012

Niobium nitride and method for producing same, niobium nitride-containing film and method for producing same, semiconductor, semiconductor device, photocatalyst, hydrogen generation device, and energy system

Applicant:

Panasonic Corporation, Kadoma-shi, Osaka, JP;

Inventors:

Takahiro Suzuki, Osaka, JP;

Takaiki Nomura, Osaka, JP;

Tomohiro Kuroha, Osaka, JP;

Nobuhiro Miyata, Osaka, JP;

Satoru Tamura, Osaka, JP;

Kenichi Tokuhiro, Osaka, JP;

Kazuhito Hato, Osaka, JP;

Assignee:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Patricia L Hailey

Int. Cl.
CPC ...
B01J 27/24 (2006.01); H01M 6/04 (2006.01); H01M 8/04 (2006.01); H01M 8/08 (2006.01); H01B 1/02 (2006.01); H01B 1/06 (2006.01); H01B 1/08 (2006.01); B01J 19/12 (2006.01); B01J 23/20 (2006.01); B01J 23/648 (2006.01); B01J 35/00 (2006.01); B01J 37/08 (2006.01); C01B 3/04 (2006.01); C01B 21/06 (2006.01); C04B 35/58 (2006.01); C04B 35/628 (2006.01); C04B 35/632 (2006.01); C25B 1/00 (2006.01); H01M 8/06 (2006.01);
U.S. Cl.
CPC ...
B01J 27/24 (2013.01); B01J 19/123 (2013.01); B01J 23/20 (2013.01); B01J 23/6484 (2013.01); B01J 35/004 (2013.01); B01J 37/086 (2013.01); C01B 3/042 (2013.01); C01B 21/0617 (2013.01); C04B 35/58007 (2013.01); C04B 35/62805 (2013.01); C04B 35/62886 (2013.01); C04B 35/6325 (2013.01); C25B 1/003 (2013.01); H01M 8/04216 (2013.01); H01M 8/0656 (2013.01); C01P 2002/85 (2013.01); C01P 2002/88 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3886 (2013.01); C04B 2235/465 (2013.01); C04B 2235/79 (2013.01); C04B 2235/80 (2013.01); Y02E 60/364 (2013.01);
Abstract

The present invention is a niobium nitride which has a composition represented by the composition formula NbNand in which a constituent element Nb has a valence of substantially +5. The method for producing the niobium nitride of the present invention includes the step of nitriding an organic niobium compound by reacting the organic niobium compound with a nitrogen compound gas.

Find Patent Forward Citations

Suzuki, Takahiro. (2015). Niobium nitride and method for producing same, niobium nitride-containing film and method for producing same, semiconductor, semiconductor device, photocatalyst, hydrogen generation device, and energy system (U.S. Patent No. 9114379). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9114379

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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