The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Aug. 07, 2012
Yong LI, San Jose, CA (US);
Fuqiang Shi, Oak Park, IL (US);
Andrew Kwok-cheung Lee, Union City, CA (US);
David Nguyen, Santa Clara, CA (US);
Jiang Chen, Cupertino, CA (US);
Yong Li, San Jose, CA (US);
Fuqiang Shi, Oak Park, IL (US);
Andrew Kwok-Cheung Lee, Union City, CA (US);
David Nguyen, Santa Clara, CA (US);
Jiang Chen, Cupertino, CA (US);
Dialog Semiconductor Inc., Campbell, CA (US);
Abstract
The embodiments herein describe a dynamic metal-oxide-semiconductor field-effect transistor (MOSFET) gate driver system architecture and control scheme. The MOSFET gate driver system dynamically adjusts both the gate driver turn-on-resistance and the gate driver turn-off resistance within a single (i.e., one) switching cycle to reduce electromagnetic interference (EMI) in the system and to minimize the conduction loss of a power MOSFET during operation.