The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Feb. 03, 2012
Matahiko Ikeda, Chiyoda-ku, JP;
Masaru Kobayashi, Chiyoda-ku, JP;
Naoki Moritake, Chiyoda-ku, JP;
Takao Mitsui, Chiyoda-ku, JP;
Hirotoshi Maekawa, Chiyoda-ku, JP;
Satoshi Ishibashi, Chiyoda-ku, JP;
Shinsuke Idenoue, Chiyoda-ku, JP;
Matahiko Ikeda, Chiyoda-ku, JP;
Masaru Kobayashi, Chiyoda-ku, JP;
Naoki Moritake, Chiyoda-ku, JP;
Takao Mitsui, Chiyoda-ku, JP;
Hirotoshi Maekawa, Chiyoda-ku, JP;
Satoshi Ishibashi, Chiyoda-ku, JP;
Shinsuke Idenoue, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A power converter has one set of two semiconductor switches performing switching actions, each of which is formed of an FET and a free wheel diode connected in anti-parallel to the FET, and a smoothing capacitor, and convers power by complementary switching actions of the FETs in the semiconductor switches. The power converter is provided with a current sensor that detects a direction of a current flowing through the semiconductor switches and a gate generation portion that skips ON signals of PWM gate signals of the semiconductor switches when the direction of the current flowing through the semiconductor switches is negative.