The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Sep. 09, 2008
Applicants:

Alfred Grakist, Oosterbeek, NL;

Frans Pansier, Nuenen, NL;

Inventors:

Alfred Grakist, Oosterbeek, NL;

Frans Pansier, Nuenen, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/00 (2006.01); H02M 1/32 (2007.01); G05F 1/40 (2006.01); H02M 3/337 (2006.01); H02M 7/538 (2007.01); H05B 41/282 (2006.01); H05B 41/285 (2006.01); H02M 7/48 (2007.01);
U.S. Cl.
CPC ...
H02M 1/32 (2013.01); G05F 1/00 (2013.01); G05F 1/40 (2013.01); H02M 3/3376 (2013.01); H02M 7/53803 (2013.01); H05B 41/2828 (2013.01); H05B 41/2856 (2013.01); H02M 2007/4815 (2013.01); Y02B 70/1433 (2013.01); Y02B 70/1441 (2013.01);
Abstract

This invention relates to improved methods of preventing MOSFET damage in a resonant switched mode power converter () by preventing or limiting capacitive mode operation. A combination of response actions (respectively delaying MOSFET switch-on, adjusting switching phase, forcing a switch-on, and increasing frequency) is utilized. In the preferred embodiment, the voltage slope at the half-bridge node () is monitored, and in alternative embodiments the same or similar set of response actions is triggered by monitoring different signals, including: the resonant current polarity at switch-off or after the non-overlap time; the voltage of the to-be-switched-on' switch; and the voltage of the 'just-switched-off' switch.


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