The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Jun. 18, 2012
Tomoaki Inokuchi, Yokohama, JP;
Takao Marukame, Tokyo, JP;
Tetsufumi Tanamoto, Kawasaki, JP;
Hideyuki Sugiyama, Kawasaki, JP;
Mizue Ishikawa, Yokohama, JP;
Yoshiaki Saito, Kawasaki, JP;
Tomoaki Inokuchi, Yokohama, JP;
Takao Marukame, Tokyo, JP;
Tetsufumi Tanamoto, Kawasaki, JP;
Hideyuki Sugiyama, Kawasaki, JP;
Mizue Ishikawa, Yokohama, JP;
Yoshiaki Saito, Kawasaki, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A spin transistor according to an embodiment includes: a first magnetic layer formed above a substrate and serving as one of a source and a drain; an insulating film having a lower face facing to an upper face of the first magnetic layer, an upper face opposed to the lower face, and a side face different from the lower and upper faces, the insulating film being formed on the upper face of the first magnetic layer and serving as a channel; a second magnetic layer formed on the upper face of the insulating film and serving as the other one of the source and the drain; a gate electrode formed along the side face of the insulating film; and a gate insulating film located between the gate electrode and the side face of the insulating film.