The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Mar. 15, 2013
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chia-Liang Hsu, Hsinchu, TW;

Chen Ou, Hsinchu, TW;

Chun-Hsiang Tu, Hsinchu, TW;

De-Shan Kuo, Hsinchu, TW;

Ting-Chia Ko, Hsinchu, TW;

Po-Shun Chiu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/46 (2010.01); H01L 33/20 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/002 (2013.01); H01L 33/20 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/38 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.


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