The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Apr. 25, 2013
Epistar Corporation, Hsinchu, TW;
Yi-Lin Guo, Hsinchu, TW;
Chen Ou, Hsinchu, TW;
Chi-Ling Lee, Hsinchu, TW;
Wei-Han Wang, Hsinchu, TW;
Hui-Tang Shen, Hsinchu, TW;
Chi-Hung Wu, Hsinchu, TW;
Hung-Chih Yang, Hsinchu, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
A method for manufacturing a light-emitting device, comprises steps of: providing an as-cut wafer having an irregularly uneven surface comprising surface roughness greater than 0.5 μm; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer.