The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Jan. 10, 2014
Showa Denko K.k., Tokyo, JP;
Noriyuki Aihara, Chichibu, JP;
Noriyoshi Seo, Hiki-gun, JP;
Noritaka Muraki, Chichibu, JP;
Ryouichi Takeuchi, Chichibu, JP;
SHOWA DENKO K.K., Tokyo, JP;
Abstract
Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlGa)As (0≦X1≦1) and a barrier layer which comprises a composition expressed by the composition formula of (AlGa)As (0<X2≦1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlGa)InP (0≦X3≦1, 0<Y1≦1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.