The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Jun. 27, 2012
David Todd Emerson, Durham, NC (US);
James Ibbetson, Santa Barbara, CA (US);
Michael John Bergmann, Durham, NC (US);
Kathleen Marie Doverspike, Apex, NC (US);
Michael John O'loughlin, Chapel Hill, NC (US);
Howard Dean Nordby, Jr., Pittsboro, NC (US);
Amber Christine Abare, Cary, NC (US);
David Todd Emerson, Durham, NC (US);
James Ibbetson, Santa Barbara, CA (US);
Michael John Bergmann, Durham, NC (US);
Kathleen Marie Doverspike, Apex, NC (US);
Michael John O'Loughlin, Chapel Hill, NC (US);
Howard Dean Nordby, Jr., Pittsboro, NC (US);
Amber Christine Abare, Cary, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InGaN and InGaN, where 0≦X<1 and 0≦Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.