The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Sep. 12, 2013
Korea Institute of Science and Technology, Seoul, KR;
Jong Ku Park, Gyeonggi-do, KR;
So Hye Cho, Seoul, KR;
Bong Geun Song, Seoul, KR;
Seung Yong Lee, Gyeonngi-do, KR;
Bo In Park, Gyeonngi-do, KR;
Hyung Ho Park, Seoul, KR;
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;
Abstract
Provided is a copper indium gallium selenium (CIGS)- or copper zinc tin sulfur (CZTS)-based solar cell including a back electrode layer and a light-absorbing layer, wherein the light-absorbing layer has a composition of CuInGa(SSe)(wherein 0.85≦x<1, 0<y<1, 0<z<1, and each of x, y and z represents a real number) or CuZnSn(SSe)(wherein 1.4≦p<2, 0<q<2, 0<r<2, and each of p, q and r represents a real number). The CIGS- or CZTS-based thin-film solar cell causes no interlayer delamination and has improved durability and photoelectric conversion efficiency. Also provided is a method for fabricating a CIGS- or CZTS-based thin-film solar cell by which conversion of molybdenum back electrode layer to molybdenum diselenide is controlled.