The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Jan. 03, 2013
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Sung-Woo Hyun, Seoul, KR;
Sun-Ghil Lee, Goyang-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes performing pre-halo ion implantation on a semiconductor substrate, forming a first epitaxial layer over the entire upper surface of the semiconductor substrate, forming a second epitaxial layer over the entire surface of the first epitaxial layer, and forming a transistor at an active region of the second epitaxial layer. The first epitaxial layer prevents the ions implanted in the semiconductor substrate in the pre-halo implantation process from diffused into the second epitaxial layer under the effects of a process used to form the transistor.