The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Aug. 17, 2012
Applicant:
Bunmi T. Adekore, Boston, MA (US);
Inventor:
Bunmi T. Adekore, Boston, MA (US);
Assignee:
RAMGOSS INC., Woburn, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/08 (2006.01); H01L 29/22 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8083 (2013.01); H01L 29/0847 (2013.01); H01L 29/22 (2013.01); H01L 29/267 (2013.01); H01L 29/66446 (2013.01); H01L 29/66454 (2013.01); H01L 29/66462 (2013.01); H01L 29/66522 (2013.01); H01L 29/66924 (2013.01); H01L 29/66969 (2013.01); H01L 29/7788 (2013.01); H01L 29/7789 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/045 (2013.01); H01L 29/0615 (2013.01); H01L 29/0657 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01);
Abstract
A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials.