The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Mar. 23, 2012
Xiaodi Liu, Beijing, CN;
LI Sun, Beijing, CN;
Haijing Chen, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
Embodiments of the disclosed technology provide an amorphous oxide thin film transistor (TFT), a method for preparing an amorphous oxide TFT, and a display panel. The amorphous oxide thin film transistor includes: a gate electrode, a gate insulating layer, a semiconductor active layer, a source electrode and a drain electrode. The semiconductor active layer comprises a channel layer and an ohmic contact layer, and the channel layer has a greater content of oxygen than the ohmic contact layer; the channel layer contacts the gate insulating layer, and the ohmic contact layer comprises two separated ohmic contact regions, one of which contacts the source electrode and the other of which contacts the drain electrode.