The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Jan. 22, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/43 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/24 (2013.01); H01L 29/432 (2013.01); H01L 29/66462 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01);
Abstract
A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer.
Lee, Jae-hoon. (2015). Nitride-based semiconductor device (U.S. Patent No. 9112010). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9112010
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile