The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Apr. 04, 2012
Applicant:
Keith Lao, Austin, TX (US);
Inventor:
Keith Lao, Austin, TX (US);
Assignees:
Samsung Electronics Co., Ltd, Suwon-Si, KR;
Samsung Austin Semiconductor L.P., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/768 (2013.01); H01L 23/481 (2013.01); H01L 23/522 (2013.01); H01L 23/5226 (2013.01);
Abstract
A method for forming a multi-level stack having a multi-level contact is provided. The method includes forming a multi-level stack comprising a specified number, n, of conductive layers and at least n−1 insulating layers. A via formation layer is formed over the stack. A first via is etched in the via formation layer at a first edge of the stack. A first multi-level contact is formed in the first via. For a particular embodiment, a second via may be etched in the via formation layer at a second edge of the stack and a second multi-level contact may be formed in the second via.