The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9111990 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 18, 2015

Filed:

Aug. 28, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventor:

Shuji Kamata, Nonoichi Ishikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/417 (2006.01); H01L 29/04 (2006.01); H01L 29/51 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/04 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/16 (2013.01); H01L 29/41708 (2013.01); H01L 29/51 (2013.01);
Abstract

A semiconductor device according to embodiments includes a semiconductor substrate, first semiconductor layers of a first conductive type provided on a surface of the semiconductor substrate, extend in a first direction, and are surrounded by a gate layer, second semiconductor layers of the first conductive type provided between the first semiconductor layers, a third semiconductor layer of the first conductive type provided at ends of the first direction of the first semiconductor layers and is surrounded by the gate layer, a fourth semiconductor layer of a second conductive type provided in the semiconductor substrate, a sixth semiconductor layer of the first conductive type provided on a back surface of the semiconductor substrate, a seventh semiconductor layer of the second conductive type provided between the sixth semiconductor layer and the first semiconductor layers, an emitter electrode, and a collector electrode.


Find Patent Forward Citations

Kamata, Shuji. (2015). Semiconductor device (U.S. Patent No. 9111990). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9111990

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