The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Apr. 23, 2014
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Evelyne Gridelet, Omal, BE;

Johannes Donkers, Valkenswaard, NL;

Petrus Hubertus Cornelis Magnee, Nijmegen, NL;

Viet Dinh, Leuven, BE;

Tony Vanhoucke, Bierbeek, BE;

Assignee:

NXP, B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 27/082 (2006.01); H01L 29/70 (2006.01); H01L 29/732 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/732 (2013.01); H01L 29/407 (2013.01); H01L 29/66242 (2013.01); H01L 29/66272 (2013.01); H01L 29/7378 (2013.01);
Abstract

Consistent with an example embodiment, a bipolar transistor comprises an emitter region vertically separated from a collector region in a substrate by a base region. The bipolar transistor further comprises a field plate electrically connected to the emitter region; the field plate extends from the emitter region along the base region into the collector region and the field plate is laterally electrically insulated from the base region and the collector region by a spacer. The spacer comprises an electrically isolating material that includes a silicon nitride layer and is vertically electrically isolated from the substrate by a further electrically isolating material.


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