The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Mar. 02, 2011
Hideki Kitagawa, Osaka, JP;
Shinya Tanaka, Osaka, JP;
Hajime Imai, Osaka, JP;
Atsuhito Murai, Osaka, JP;
Mitsunori Imade, Osaka, JP;
Tetsuo Kikuchi, Osaka, JP;
Kazunori Morimoto, Osaka, JP;
Junya Shimada, Osaka, JP;
Jun Nishimura, Osaka, JP;
Hideki Kitagawa, Osaka, JP;
Shinya Tanaka, Osaka, JP;
Hajime Imai, Osaka, JP;
Atsuhito Murai, Osaka, JP;
Mitsunori Imade, Osaka, JP;
Tetsuo Kikuchi, Osaka, JP;
Kazunori Morimoto, Osaka, JP;
Junya Shimada, Osaka, JP;
Jun Nishimura, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A circuit board () includes a plurality of transistor elements on an insulating substrate (). At least one of the plurality of transistor elements is an oxide TFT () including, as a channel layer (), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT () (i) being different from the oxide TFT () in functions as circuit components and (ii) including, as a channel layer (), an amorphous silicon semiconductor. The oxide TFT () is a top gate transistor, and the a-SiTFT () is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.