The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Mar. 31, 2014
Applicant:

Samsung Display Co., Ltd., Yongin, KR;

Inventors:

Pil-Sang Yun, Seoul, KR;

Ki-Won Kim, Suwon-si, KR;

Hye-Young Ryu, Seoul, KR;

Woo-Geun Lee, Yongin-si, KR;

Seung-Ha Choi, Suwon-si, KR;

Jae-Hyoung Youn, Hwaseong-si, KR;

Kyoung-Jae Chung, Seoul, KR;

Young-Wook Lee, Suwon-si, KR;

Je-Hun Lee, Seoul, KR;

Kap-Soo Yoon, Seoul, KR;

Do-Hyun Kim, Seongnam-si, KR;

Dong-Ju Yang, Seoul, KR;

Young-Joo Choi, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 27/127 (2013.01); H01L 27/1214 (2013.01); H01L 27/1288 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract

A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.


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