logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9111803 B1

PDFFull Text
Date of Patent:
Aug. 18, 2015

Filed:

Sep. 26, 2012

Thin-film device, thin-film device array, and method of manufacturing thin-film device

Applicant:

Joled Inc., Tokyo, JP;

Inventors:

Tomohiko Oda, Osaka, JP;

Takahiro Kawashima, Osaka, JP;

Assignee:

JOLED INC., Tokyo, JP;

Attorney:

Greenblum & Bernstein, P.L.C.

Primary Examiner:

Allan R Wilson

Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/02612 (2013.01); H01L 21/02683 (2013.01); H01L 21/02691 (2013.01); H01L 21/268 (2013.01); H01L 21/324 (2013.01); H01L 27/1229 (2013.01); H01L 27/1274 (2013.01); H01L 27/1281 (2013.01); H01L 27/1285 (2013.01); H01L 27/1296 (2013.01);
Abstract

A thin-film device includes: a first device unit having a first gate electrode and a first crystalline silicon thin film located opposite to the first gate electrode; and a second device unit having a second gate electrode and a second crystalline silicon thin film located opposite to the second gate electrode. The first crystalline silicon thin film includes a strip-shaped first area and a second area smaller than the strip-shaped first area in average grain size. The first device unit has, as a channel, at least a part of the strip-shaped first area. The second silicon thin film includes a second crystalline area smaller than the strip-shaped first area in average grain size. The second device unit has the second crystalline area as a channel. The strip-shaped first area includes crystal grains in contact with the second area on each side of the strip-shaped first area.

Find Patent Forward Citations

Loading…