IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9111786 B1

PDFFull Text
Date of Patent:
Aug. 18, 2015

Filed:

Dec. 19, 2014

Complementary field effect transistors using gallium polar and nitrogen polar iii-nitride material

Applicants:

Francis J. Kub, Arnold, MD (US);

Travis J. Anderson, Alexandria, VA (US);

Michael A. Mastro, Fairfax, VA (US);

Charles R. Eddy, Jr., Columbia, MD (US);

Jennifer K. Hite, Arlington, VA (US);

Inventors:

Francis J. Kub, Arnold, MD (US);

Travis J. Anderson, Alexandria, VA (US);

Michael A. Mastro, Fairfax, VA (US);

Charles R. Eddy, Jr., Columbia, MD (US);

Jennifer K. Hite, Arlington, VA (US);

Assignee:

The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);

Attorneys:

US Naval Research Laboratory

Stephen T. Hunnius

Primary Examiner:

Marvin Payen

Assistant Examiner:

Jeremy Joy

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 27/092 (2006.01); H01L 27/095 (2006.01); H01L 29/20 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/04 (2006.01); H01L 29/36 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/335 (2006.01); H01L 21/8228 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/095 (2013.01); H01L 27/092 (2013.01); H01L 29/045 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/365 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7782 (2013.01); H01L 29/7783 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/7831 (2013.01); H01L 21/8228 (2013.01); H01L 21/8238 (2013.01);
Abstract

A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.

Find Patent Forward Citations

Loading…