The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Apr. 10, 2013
Applicant:
Renesas Electronics Corporation, Kanagawa, JP;
Inventor:
Kenzo Manabe, Kanagawa, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/28264 (2013.01); H01L 21/823412 (2013.01); H01L 21/823425 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 27/088 (2013.01); H01L 29/4236 (2013.01);
Abstract
Replacement metal gates well suited for self-aligned contact formation are made by replacing the dummy gate with a recessed polysilicon layer and then effecting an aluminum-polysilicon substitution. The resulting upper polysilicon layer is easily removed from the recessed aluminum layer, which can then be protected with a protective dielectric layer for subsequent formation of a source or drain contact hole.