The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Feb. 24, 2012
Applicants:
Thomas Popp, Falkenstein/Gfaell, DE;
Stefan Pompl, Landshut, DE;
Rudolf Berger, Regensburg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/92 (2006.01); H01L 27/08 (2006.01); H01L 49/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0805 (2013.01); H01L 28/90 (2013.01);
Abstract
A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.