The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Jan. 24, 2012
Satoshi Toriumi, Ebina, JP;
Satoshi Toriumi, Ebina, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
Provided is a silicon structure with a three-dimensionally complex shape. Further provided is a simple and easy method for manufacturing the silicon structure with the use of a phenomenon in which an ordered pattern is formed spontaneously to form a nano-structure. Plasma treatment under hydrogen atmosphere is performed on an amorphous silicon layer and the following processes are performed at the same time: a reaction process for growing microcrystalline silicon on a surface of the silicon layer and a reaction process for etching the amorphous silicon layer which is exposed, so that a nano-structure including an upper structure in a microcrystalline state and a lower structure in an amorphous state, over the silicon layer is formed; accordingly, a silicon structure with a three-dimensionally complex shape can be provided.