The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Jul. 13, 2012
Applicants:

Franz Hirler, Isen, DE;

Andreas Meiser, Sauerlach, DE;

Steffen Thiele, Munich, DE;

Inventors:

Franz Hirler, Isen, DE;

Andreas Meiser, Sauerlach, DE;

Steffen Thiele, Munich, DE;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H01L 27/06 (2006.01); H01L 27/082 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/732 (2006.01); H01L 29/735 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); H01L 27/088 (2013.01); H01L 27/0826 (2013.01); H01L 29/42372 (2013.01); H01L 23/481 (2013.01); H01L 29/0634 (2013.01); H01L 29/402 (2013.01); H01L 29/735 (2013.01); H01L 29/7327 (2013.01); H01L 29/781 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7824 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01); H03K 2217/0081 (2013.01);
Abstract

A bridge circuit is provided. The bridge circuit includes a first integrated semiconductor device having a high-side switch, a second integrated semiconductor device having a low-side switch electrically connected with the high-side switch, a first level-shifter electrically connected with the high-side switch and integrated in one of the first integrated semiconductor device and the second integrated semiconductor device, and a second level-shifter electrically connected with the low-side switch and integrated in one of the first integrated semiconductor device and the second integrated semiconductor device. Further, an integrated semiconductor device is provided.


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