The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Oct. 11, 2013
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Kazuya Yamaguchi, Matumoto, JP;
FUJI ELECTRIC CO., LTD., , JP;
Abstract
A semiconductor device manufacturing method with high productivity is disclosed with improved trade-off relationship between auto-doping and breakdown in alignment mark form. First to sixth epitaxial layers are grown sequentially on Si {100} main surface of an arsenic doped substrate using multilayer epitaxial technology. Epitaxial growth conditions of the first to sixth epitaxial layers are growth at atmospheric pressure and a temperature of 1,150° C. to 1,180° C., with epitaxial growth rate of 2.2 to 2.6 μm/minute. An alignment mark of depressed form whose bottom surface is the Si {100} plane is formed in the arsenic doped substrate. Every time one of the first to sixth epitaxial layers is grown on the main surface of the arsenic doped substrate, an alignment mark of depressed form is formed in the outermost epitaxial layer by a portion above the alignment mark of the layer below being transformed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile