The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Sep. 17, 2010
Applicants:

Ioannis Giomataris, Versailles, FR;

Rui DE Oliveira, Arenthon, FR;

Inventors:

Ioannis Giomataris, Versailles, FR;

Rui De Oliveira, Arenthon, FR;

Assignees:

CERN—European Organization for Nuclear Research, Geneva, CH;

CEA, Gif-Sur-Yvette, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 13/00 (2006.01); H01J 47/06 (2006.01);
U.S. Cl.
CPC ...
H01J 47/065 (2013.01); H01J 47/06 (2013.01);
Abstract

The invention relates to an improved method for fabricating the amplification gap of an avalanche particle detector in which two parallel electrodes are spaced apart by dielectric spacer elements. A foil including a bulk layer made of dielectric material sandwiched by two mutually parallel metallic electrodes is provided, and holes are formed in one of the metallic layers by means of photolithography. The amplification gap is then formed in the bulk layer by means of carefully controlled etching of the bulk material through the holes formed in one of the metallic layers. The invention not only provides a simplified fabrication process, but also results in a detector with enhanced spatial and energy resolution.


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