The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Dec. 21, 2012
Applicant:

Peking University, Beijing, CN;

Inventors:

Jinfeng Kang, Beijing, CN;

Bing Chen, Beijing, CN;

Bin Gao, Beijing, CN;

Feifei Zhang, Beijing, CN;

Lifeng Liu, Beijing, CN;

Xiaoyan Liu, Beijing, CN;

Assignee:

Peking University, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/003 (2013.01); G11C 13/0007 (2013.01); G11C 13/0097 (2013.01); G11C 13/0028 (2013.01); G11C 2013/0073 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/74 (2013.01); G11C 2213/79 (2013.01);
Abstract

A resistive switching memory device and a method for operating the same are disclosed. The device includes a plurality of resistive switching memory units arranged in a matrix, each of which includes a switching element and a resistive switching device, and the switching element being connected to a word line at its control terminal, to the resistive switching device at one terminal, and to a bit line at the other terminal; a word line decoder adapted to decode an input address signal to switch on the switching element in at least one of resistive switching memory units; and a driving circuit adapted to apply a voltage pulse whose front edge changes slowly across the resistive switching device by the bit line synchronously with the switching-on of the switching element. Using the scheme of the above embodiments, the durability characteristic of the resistive switching device can be improved, such as degradation of high-low resistance value window and the failure of the device with transition times can be reduced.


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