The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Dec. 24, 2012
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Ki-Chul Kim, Seongnam-si, KR;

Bong-Jin Kuh, Suwon-si, KR;

Jung-Yun Won, Hwaseong-si, KR;

Eun-Ha Lee, Seoul, KR;

Han-Mei Choi, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/035 (2006.01); G02B 6/122 (2006.01); G02B 6/124 (2006.01); G02F 1/025 (2006.01); G02B 6/132 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/122 (2013.01); G02B 6/124 (2013.01); G02F 1/025 (2013.01); G02F 1/035 (2013.01); G02B 6/132 (2013.01); G02B 2006/12061 (2013.01);
Abstract

A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>.


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