The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Dec. 12, 2014
Applicant:

Life Technologies Corporation, Carlsbad, CA (US);

Inventors:

Keith G. Fife, Palo Alto, CA (US);

Jungwook Yang, Newton, MA (US);

Assignee:

Life Technologies Corporation, Carlsbad, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 15/06 (2006.01); G01N 27/414 (2006.01); H03K 5/003 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01); H03K 5/003 (2013.01); Y10S 436/806 (2013.01); Y10S 436/807 (2013.01); Y10T 436/11 (2015.01);
Abstract

An array of sensors arranged in matched pairs of transistors with an output formed on a first transistor and a sensor formed on the second transistor of the matched pair. The matched pairs are arranged such that the second transistor in the matched pair is read through the output of the first transistor in the matched pair. The first transistor in the matched pair is forced into the saturation (active) region to prevent interference from the second transistor on the output of the first transistor. A sample is taken of the output. The first transistor is then placed into the linear region allowing the sensor formed on the second transistor to be read through the output of the first transistor. A sample is taken from the output of the sensor reading of the second transistor. A difference is formed of the two samples.


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