The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Apr. 23, 2014
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventor:
Pierre Andre Genest, Lafitte Vigordane, FR;
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0185 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/162 (2013.01); H03K 2217/0009 (2013.01); H03K 2217/009 (2013.01); H03K 2217/0036 (2013.01);
Abstract
In an embodiment, a gate driver circuit and/or method therefor may include configuring the gate driver circuit form a drive current to supply to a gate of an MOS transistor wherein the value of the drive current is a minimum value that can be supplied to the gate without increasing a charge stored on a gate-to-source capacitance of the MOS transistor; configuring the gate driver circuit to change the value of the drive current responsively to changes of a Vgs of the MOS transistor.