The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2015

Filed:

Apr. 30, 2013
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;

Inventors:

Naohiro Nodake, Nagaokakyo, JP;

Hideaki Takahashi, Nagaokakyo, JP;

Shin Saijo, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/22 (2013.01); H03H 3/10 (2006.01); H01L 41/29 (2013.01); H03H 3/04 (2006.01); H01L 41/27 (2013.01); H03H 9/02 (2006.01);
U.S. Cl.
CPC ...
H01L 41/29 (2013.01); H01L 41/22 (2013.01); H01L 41/27 (2013.01); H03H 3/04 (2013.01); H03H 3/10 (2013.01); H03H 9/0222 (2013.01); H03H 2003/045 (2013.01); H03H 2003/0414 (2013.01); Y10T 29/42 (2015.01); Y10T 29/49005 (2015.01); Y10T 29/49155 (2015.01);
Abstract

A manufacturing method for a boundary acoustic wave device is provided which includes, an IDT electrode, a first dielectric layer, and a second dielectric layer on a piezoelectric substrate. The first dielectric layer is made of a deposited film. A thickness of the IDT electrode is about 10% or more of λ. A difference between a height of the first dielectric layer, measured from an upper surface of the piezoelectric substrate, above a center of an electrode finger of the IDT electrode and a height of the first dielectric layer, measured from the upper surface of the piezoelectric substrate, above a center of a gap between adjacent electrode fingers, i.e., a magnitude of unevenness in an upper surface of the first dielectric layer, is about 5% or less of λ.


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