The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Jan. 18, 2012
Applicants:
Karl Engl, Pentling, DE;
Johann Eibl, Wald, DE;
Tamas Lamfalusi, Regensburg, DE;
Markus Maute, Alteglofsheim, DE;
Inventors:
Karl Engl, Pentling, DE;
Johann Eibl, Wald, DE;
Tamas Lamfalusi, Regensburg, DE;
Markus Maute, Alteglofsheim, DE;
Assignee:
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/58 (2010.01); H01L 33/38 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/20 (2013.01); H01L 33/382 (2013.01); H01L 33/32 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An optoelectronic semiconductor chip has an epitaxial layer sequence. A doped epitaxial layer of the epitaxial layer sequence has a first region and a second region and a protected structure. The first region of the doped epitaxial layer completely covers the protected structure. The outer surface of the doped epitaxial layer has a first roughness in the first region and a second roughness in the second region.