The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Nov. 11, 2012
Applicant:
Bridgelux, Inc., Livermore, CA (US);
Inventors:
Frank T. Shum, Sunnyvale, CA (US);
William W. So, Sunnyvale, CA (US);
Steven D. Lester, Sunnyvale, CA (US);
Assignee:
BRIDGELUX, INC., Livermore, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/74 (2006.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); H01L 33/32 (2010.01); H01L 33/20 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/385 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/387 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01);
Abstract
Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.