The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
May. 14, 2013
Applicant:
Sun Harmonics Ltd, Hangzhou, CN;
Inventors:
Assignee:
SUN HARMONICS, LTD, Zhejian, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/032 (2006.01); C09D 11/02 (2014.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 31/0322 (2013.01); C09D 11/02 (2013.01); Y02E 10/541 (2013.01); Y02E 10/544 (2013.01);
Abstract
A method of preparing Cu(In,Ga)SSeCu(In,Ga) (S,Se)(CIGSS) absorber layers uses coated semiconductor nanoparticle and nanowire networks. The nanoparticles and nanowires containing one or more elements from group IB and/or IIIA and/or VIA are prepared from metal salts such as metal chloride and acetate at room temperature without inert gas protection. A uniform and non-aggregation CIGS precursor layer is fabricated with the formation of nanoparticle and nanowire networks utilizing ultrasonic spaying technique. High quality CIGSS film is obtained by cleaning the residue salts and carbon agents at an increased temperature and selenizing the pretreated precursor layer.