The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Oct. 23, 2012
Applicant:
Max-planck-gesellschaft Zur Foerderung Der Wissenschaften E. V., Munich, DE;
Inventors:
Masahiro Teshima, Unterschleissheim, DE;
Razmick Mirzoyan, Unterschleissheim, DE;
Boris Anatolievich Dolgoshein, Moscow, RU;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 31/102 (2006.01); G01T 1/20 (2006.01); G01T 1/24 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); H01L 31/107 (2006.01); H01L 31/115 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/102 (2013.01); G01T 1/2018 (2013.01); G01T 1/24 (2013.01); H01L 27/146 (2013.01); H01L 27/1446 (2013.01); H01L 27/14601 (2013.01); H01L 31/107 (2013.01); H01L 31/115 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); Y02E 10/547 (2013.01);
Abstract
A cell for a silicon-based photoelectric multiplier may comprise a first layer of a first conductivity type and a second layer of a second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction. The cell may be processed by an ion implantation act wherein parameters of the ion implantation are selected such that due to an implantation-induced damage of the crystal lattice, an absorption length of infrared light of a wavelength in a range of ˜800 nm to 1000 nm is decreased.