The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2015

Filed:

Feb. 05, 2014
Applicant:

The Board of Trustees of the University of Illinois, Urbana, IL (US);

Inventors:

John A. Rogers, Champaign, IL (US);

Angus A. Rockett, Urbana, IL (US);

Ralph Nuzzo, Champaign, IL (US);

Jongseung Yoon, Urbana, IL (US);

Alfred Baca, Urbana, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0203 (2014.01); H01L 31/05 (2014.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/028 (2006.01); H01L 31/048 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0508 (2013.01); H01L 31/028 (2013.01); H01L 31/035281 (2013.01); H01L 31/048 (2013.01); H01L 31/1804 (2013.01); H01L 31/1896 (2013.01); Y02E 10/547 (2013.01);
Abstract

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 μm and, for example, is made from low grade Si.


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