The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2015

Filed:

May. 14, 2007
Applicant:

Howard W. H. Lee, Saratoga, CA (US);

Inventor:

Howard W. H. Lee, Saratoga, CA (US);

Assignee:

Stion Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 5/16 (2006.01); H01L 31/0352 (2006.01); H01L 31/032 (2006.01); H01L 31/06 (2012.01); H01L 31/074 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 31/032 (2013.01); H01L 31/06 (2013.01); H01L 31/074 (2013.01); Y02E 10/50 (2013.01); Y10T 428/25 (2015.01);
Abstract

A photovoltaic device and related methods. The device has a nanostructured material positioned between an electron collecting electrode and a hole collecting electrode. An electron transporting/hole blocking material is positioned between the electron collecting electrode and the nanostructured material. In a specific embodiment, negatively charged carriers generated by optical absorption by the nanostructured material are preferentially separated into the electron transporting/hole blocking material. In a specific embodiment, the nanostructured material has an optical absorption coefficient of at least 10cmfor light comprised of wavelengths within the range of about 400 nm to about 700 nm.


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